| 发明名称 |
Metal gate process |
| 摘要 |
A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the first recess and the second recess is formed. A material is filled in the first recess but exposing a top part of the first recess. The first metal layer in the top part of the first recess and in the second recess is simultaneously removed. The material is removed. A second metal layer and a metal gate layer in the first recess and the second recess are sequentially filled. |
| 申请公布号 |
US8753968(B2) |
申请公布日期 |
2014.06.17 |
| 申请号 |
US201113279355 |
申请日期 |
2011.10.24 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Huang Kuang-Hung;Liao Po-Jui;Wang Yao-Chang;Tseng Chi-Sheng;Yang Jie-Ning |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A metal gate process, comprising:
providing an isolating layer on a substrate, wherein the isolating layer has a first recess and a second recess; forming a first metal layer covering the first recess and the second recess; only filling a material in the first recess but exposing a top part of the first recess; simultaneously removing the first metal layer in the top part of the first recess and in the whole second recess; removing the material; and sequentially filling a second metal layer and a metal gate layer in the first recess and the second recess.
|
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
