| 摘要 |
A method of manufacturing mask and a thin film transistor substrate using the same are provided to form an interval between the barrier layers of the single slit mask which is narrower than a channel length. The gate electrode(102) is formed on the substrate. The gate insulating layer(106) is formed on the substrate. The source and drain electrode pattern and semiconductor pattern group are formed by using the single slit mask(200) on the substrate. The interval between the barrier layers of the slit mask is controlled to form the channel. The protective film having the contact hole is formed on the substrate. Here, a part of the drain electrode is exposed through the contact hole. The pixel electrode is formed on the protective film. |
