| 摘要 |
According to an embodiment of the present invention, a light emitting diode comprises: a substrate; a light emitting structure having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are arranged on the substrate to be sequentially stacked; and at least either a first current diffusion layer which is arranged on a boundary between the first conductive semiconductor layer and the active layer or a second current diffusion layer which is arranged on a boundary between the active layer and the second conductive semiconductor layer. The first conductive semiconductor layer includes AlxGa(1-x)N (0<x<1), the second conductive semiconductor layer includes AlyGa(1-y)N (0<y<1), the first current diffusion layer includes AlaGa(1-a)N (0.5<=a<=1), and the second current diffusion layer includes AlbGa(1-b)N (0.7<=b<=1). The thickness of the first current diffusion layer is thinner than the thickness of the first conductive semiconductor layer, and the thickness of the second current diffusion layer is thinner than the thickness of the second conductive semiconductor layer. |
