发明名称 NONVOLATILE MEMORY AND METHOD OF OPERATING NONVOLATILE MEMORY
摘要 <p>The present invention relates to a non-volatile memory. The non-volatile memory of the present invention comprises: a plurality of banks; a control logic which is configured to output write enable signals and read enable signals corresponding to each of the plurality of banks based on mode information stored in a plurality of storage units; and a plurality of read and write circuits which is configured to independently enable or disable write and read of each of the plurality of banks in response to the activation of the write enable signals and the read enable signals. In the initial state in which the mode information is stored to the plurality of storage units, the control logic activates the write enable signals and the read enable signals regardless of the mode information.</p>
申请公布号 KR20140072276(A) 申请公布日期 2014.06.13
申请号 KR20120137079 申请日期 2012.11.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHAN KYUNG;LEE, SANG BO;JEON, SEONG HYUN
分类号 G11C16/06;G11C7/10;G11C8/12 主分类号 G11C16/06
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