| 发明名称 |
THIN FILM TRANSISTOR WITH TWO-DIMENSIONAL DOPING ARRAY |
| 摘要 |
A thin film transistor includes: a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary. |
| 申请公布号 |
US2014159039(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201314104762 |
申请日期 |
2013.12.12 |
| 申请人 |
The Hong Kong University of Science and Technology |
发明人 |
KWOK Hoi Sing;ZHANG Meng;CHEN Shuming;ZHOU Wei;WONG Man |
| 分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A thin film transistor, comprising:
a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary.
|
| 地址 |
Hong Kong CN |
