SELF-RECTIFYING RRAM CELL STRUCTURE AND 3D CROSSBAR ARRAY ARCHITECTURE THEREOF

摘要

The present disclosure provides a self-rectifying RRAM, including: a first electrode layer formed of a first metal element; a second electrode layer formed of a second metal element different from the first metal element; and a first resistive-switching layer and a second resistive-switching layer sandwiched between the first electrode layer and the second electrode layer, wherein the first resistive-switching layer and the second switching layer form an ohmic contact, and the first resistive-switching layer has a first bandgap lower than a second bandgap of the second resistive-switching layer. Furthermore, an RRAM 3D crossbar array architecture is also provided.

主权项

1. A self-rectifying RRAM cell structure, comprising
a first electrode layer formed of a first metal element; a second electrode layer formed of a second metal element different from the first metal element; and a first resistive-switching layer and a second resistive-switching layer sandwiched between the first electrode layer and the second electrode layer, wherein the first resistive-switching layer and the second switching layer form an ohmic contact, and the first resistive-switching layer has a first bandgap lower than a second bandgap of the second resistive-switching layer.