III-N SEMICONDUCTOR-ON-SILICON STRUCTURES AND TECHNIQUES

摘要

III-N semiconductor-on-silicon integrated circuit structures and techniques are disclosed. In some cases, the structure includes a first semiconductor layer formed on a nucleation layer, the first semiconductor layer including a 3-D GaN layer on the nucleation layer and having a plurality of 3-D semiconductor structures, and a 2-D GaN layer on the 3-D GaN layer. The structure also may include a second semiconductor layer formed on or within the first semiconductor layer, wherein the second semiconductor layer includes AlGaN on the 2-D GaN layer and a GaN layer on the AlGaN layer. Another structure includes a first semiconductor layer formed on a nucleation layer, the first semiconductor layer comprising a 2-D GaN layer on the nucleation layer, and a second semiconductor layer formed on or within the first semiconductor layer, wherein the second semiconductor layer includes AlGaN on the 2-D GaN layer and a GaN layer on the AlGaN layer.