SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a semiconductor substrate including a first trench defining active areas in a first area and a second trench formed in a second area near the first area, a gate electrode which crosses the active areas in the first area, a charge storing pattern disposed between the gate electrode and the active areas, a blocking insulation film extending from the first trench between the gate electrode and the charge storing pattern and defining a first are gap in the first trench, and an insulation pattern spaced from a bottom surface of the second trench and defining a second are gap in the second trench, in which the first and second trenches may have the substantially same depth and a vertical height of the first are gap may be larger than a vertical height of the second air gap.