REACTIVE SPUTTERING METHOD AND REACTIVE SPUTTERING APPARATUS

摘要

The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMnO3 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used.

主权项

1. A reactive sputtering method of sputtering a target disposed in a chamber, supplying reactive gas into the chamber, and forming a deposited film on a to-be-processed substrate disposed in the chamber by reactive sputtering, the method comprising the steps of:
measuring a temperature of a constituent member that is provided in the chamber and faces a processing space; and adjusting a flow rate of the reactive gas according to a rise of the measured temperature so as to reduce the flow rate of the reactive gas supplied into the chamber.