| 摘要 |
<p>On a board-like single crystal silicon base material (1A), an insulating layer (4) is formed of alumina, diamond, aluminum nitride or silicon nitride by means of chemical vapor deposition or physical vapor deposition, then the single crystal silicon base material (1A) is formed as a single crystal silicon substrate (1), and an interposer substrate (10) having the heat conductive insulating layer (4) on the single crystal silicon substrate (1) is obtained. The interposer substrate is useful for higher heat dissipation and high speed application (improved high frequency characteristics) of semiconductor devices, has semiconductor chips or the like easily mounted thereon, and can be firmly bonded to wiring boards and the semiconductor chips.</p> |
