| 摘要 |
<p>The present invention relates to a plasma chemical vapour deposition device, the device comprising: a vacuum chamber; a vacuum adjusting unit for adjusting the degree of vacuum inside the vacuum chamber; a gas supply unit for supplying a process gas into the vacuum chamber; a circular electrode which is rotatably provided in the form of a roll on the inside of the vacuum chamber, and on the outer circumferential surface of which is formed an insulating layer; at least one magnetic field generating member which is provided on the inside of the circular electrode, and generates a magnetic field for forming a plasma on the outside of the circular electrode; a substrate-material-forwarding unit in which a substrate material is forwarded roll-to-roll in such a way that the substrate material wraps in close contact around a plasma-forming part of the circular electrode; and a power-source-supply unit for supplying power to the circular electrode. In this way, a plasma chemical vapour deposition device is provided which is capable of high-speed and high-quality film formation on a substrate of an insulating and electrically-conductive material.</p> |
