发明名称 |
COMPOSITE HARDMASK FOR FINFET STRUCTURES |
摘要 |
<p>A FinFET structure is formed by forming a hardmask layer on a substrate including a silicon-containing layer on an insulating layer. The hardmask layer includes first, second and third layers on the silicon-containing layer. An array of fins is formed from the hardmask layer and the silicon-containing layer. A gate is formed covering a portion but not all of a length of each of the array of fins. The portion covers each of the fins in the array. The gate defines source/drain regions on either side of the gate. A spacer is formed on each side of the gate, the forming of the spacer performed to remove the third layer from portions of the fins in the source/drain regions. The second layer of the hardmask layer is removed from the portions of the fins in the source/drain regions, and the fins in the source/drain regions are merged.</p> |
申请公布号 |
WO2014089438(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
WO2013US73590 |
申请日期 |
2013.12.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BASKER, VEERARAGHAVAN, S.;LEOBANDUNG, EFFENDI;YAMASHITA, TENKO;YEH, CHUN-CHEN |
分类号 |
H01L29/772;H01L21/033;H01L21/308 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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