| 发明名称 |
METHOD OF REDUCING CONTACT RESISTANCE |
| 摘要 |
In one embodiment a method of forming low contact resistance in a substrate includes forming a silicide layer on the substrate, the silicide layer and substrate defining an interface therebetween in a source/drain region, and performing a hot implant of a dopant species into the silicide layer while the substrate is at a substrate temperature greater than 150° C., where the hot implant is effective to generate an activated dopant layer containing the dopant species, and the activated dopant layer extends from the interface into the source/drain region. |
| 申请公布号 |
US2014162442(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201313921678 |
申请日期 |
2013.06.19 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Khaja Fareen Adeni;Colombeau Benjamin |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming low contact resistance in a substrate, comprising
forming a silicide layer on the substrate, the silicide layer and substrate defining an interface therebetween in a source/drain region; and performing a hot implant of a dopant species into the silicide layer while the substrate is at a substrate temperature greater than 150° C., the hot implant effective to generate an activated dopant layer containing the dopant species, the activated dopant layer extending from the interface into the source/drain region.
|
| 地址 |
Gloucest MA US |
