HIGH-DENSITY STACKED PLANAR METAL-INSULATOR-METAL CAPACITOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

An embodiment of a high-density, stacked, planar metal-insulator-metal (MIM) capacitor structure includes a stack of planar electrodes and interposing dielectric layers. Vertically-alternating electrodes are horizontally-staggered, and vias are formed through the multiple electrodes, so that electrical connection is made circumferentially through the via sidewalls to multiple electrodes through which a given via passes. An MIM capacitor incorporating a multiple-level capacitor stack may be fabricated by repeated usage of the same mask operation for each incremental capacitor stack level, and without requiring additional masks beyond those utilized for the first such level.

主权项

1. A method for fabricating a metal-insulator-metal (MIM) capacitor structure, said method comprising:
forming a vertical stack of planar electrodes and interposing dielectric layers in an overlap region, each of a first set of one or more electrodes of the vertical stack extending beyond the overlap region to a first region but not to a second region, and each of a second set of two or more electrodes of the vertical stack extending beyond the overlap region to the second region but not to the first region; forming vias for a first conductor layer above the vertical stack to a second conductor layer below the vertical stack, each via having a sidewall, each of a first set of one or more of said vias formed in the first region through and electrically connected at its sidewall to each of the first set of one or more electrodes of the vertical stack, and each of a second set of one or more of said vias formed in the second region through and electrically connected at its sidewall to each of the second set of two or more electrodes of the vertical stack.