SOLID-STATE IMAGE CAPTURE DEVICE

摘要

Provided is a solid-state image capture device whereby it is possible, using a negative feedback amplifier circuit, to significantly reduce kTC noise. A solid-state image capture device comprises a pixel unit further comprising a plurality of pixels which are arrayed in a matrix upon a semiconductor substrate. The pixel unit further comprises a power source line, and a column signal line, for each column thereof. Each of the plurality of pixels further comprises: a photoelectric conversion unit which generates a signal load corresponding to an inputted light; an accumulator unit which accumulates the signal load; a reset transistor; an amplifier transistor; and an interrupt transistor. The amplifier transistor and the interrupt transistor configure a negative feedback amplifier circuit, thereby allowing a significant reduction in kTC noise.