| 发明名称 |
SEMICONDUCTOR DEVICE HAVING TRANSISTOR AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME |
| 摘要 |
Semiconductor device capable of preventing off-leakage of the transistor may include a pulse voltage generator configured to generate a pulse voltage, and a transistor configured to have a gate provided with the pulse voltage. The transistor is in an off state in response to the pulse voltage. |
| 申请公布号 |
US2014160863(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201313843397 |
申请日期 |
2013.03.15 |
| 申请人 |
SK HYNIX INC. |
发明人 |
CHO Young-Hoon |
| 分类号 |
H03K17/16;G11C7/12 |
主分类号 |
H03K17/16 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device, comprising:
a pulse voltage generator configured to generate a pulse voltage; and a transistor configured to have a gate provided with the pulse voltage, wherein the transistor is in an off state in response to the pulse voltage.
|
| 地址 |
Gyeonggi-do KR |
