| 摘要 |
The present invention provides a semiconductor device which can be miniaturized or highly integrated. Also, the semiconductor device including an oxide semiconductor obtains excellent electrical characteristics. The present invention provides the highly reliable semiconductor device by suppressing a change in the electrical characteristics of the semiconductor device including the oxide semiconductor. The semiconductor device includes an island-like oxide semiconductor layer over an insulating surface; an insulating layer surrounding a side surface of the oxide semiconductor layer; a source electrode layer and a drain electrode layer in contact with top surfaces of the oxide semiconductor layer and the insulating layer; a gate electrode layer overlapping the oxide semiconductor layer; and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode layer. The touch electrode layer and the drain electrode layer are provided above the top surface of the oxide semiconductor layer. The top surface of the insulating layer is planarized. |
