沟渠式半导体元件及其制作方法,申请号TW098112026-传众专利搜索

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发明名称	沟渠式半导体元件及其制作方法
摘要
申请公布号	TWI441335	申请公布日期	2014.06.11
申请号	TW098112026	申请日期	2009.04.10
申请人	茂达电子股份有限公司新竹市新竹科学工业园区笃行一路6号	发明人	林伟捷;林礼政
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人	戴俊彦新北市永和区福和路389号6楼之3;吴丰任新北市永和区福和路389号6楼之3
主权项
地址	新竹市新竹科学工业园区笃行一路6号

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