| 摘要 |
MRAM cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21), a storage layer (23, 231), a tunnel barrier layer (22) and an antiferromagnetic layer (24) exchange- coupling the storage layer (23, 231) such that the storage magnetization (234) can be pinned when the antiferromagnetic layer (24) is below a critical temperature and freely varied when the antiferromagnetic layer (24) is heated at or above the critical temperature; said sense layer (21) being arranged such that the sense magnetization (210) can be switched from a first stable direction to another stable direction opposed to the first direction; the switched sense magnetization (210) generating generating a sense stray field (60) being large enough for switching the storage magnetization (234) according to 15 the switched sense magnetization (210), when the magnetic tunnel junction (2) is heated at the writing temperature. The disclosure also relates to a method for writing to the MRAM cell with increased reliability and reduced power consumption. |
