Protection circuit, semiconductor device, photoelectric conversion device, and electronic device

摘要

It is an object to provide a protection circuit and a semiconductor device to which a countermeasure against ESD is applied. The protection circuit includes a signal line electrically connected to an integrated circuit; a first diode provided between the signal line and a first power supply line; a second diode provided in parallel to the first diode; and a third diode provided between the first power supply line and a second power supply line. The first diode is a diode formed by diode-connecting a transistor, and the second diode is a diode having a PIN junction or a PN junction. The protection circuit is particularly effective when applied to a semiconductor device manufactured using a thin film transistor.

主权项

1. A protection circuit comprising:
a first diode between a signal line and a first power supply line; a second diode between the signal line and the first power supply line in parallel to the first diode; and a third diode between the first power supply line and a second power supply line, wherein the first diode is a diode-connected transistor, wherein the second diode has a PIN junction or a PN junction, wherein each of the first diode and the second diode is electrically connected to the signal line and the first power supply line such that a reverse bias is applied to each of the first diode and the second diode when a potential of the signal line is higher than a potential of the first power supply line, wherein a channel length of the first diode is 2 μm to 6 μm, and wherein a channel width of the first diode is 3000 μm to 4000 μm.