发明名称 Memory devices having source lines directly coupled to body regions and methods
摘要 Memory devices, memory cell strings and methods of operating memory devices are shown. Configurations described include directly coupling an elongated body region to a source line. Configurations and methods shown should provide a reliable bias to a body region for memory operations such as erasing.
申请公布号 US8750040(B2) 申请公布日期 2014.06.10
申请号 US201113011223 申请日期 2011.01.21
申请人 Micron Technology, Inc. 发明人 Goda Akira
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
主权项 1. A memory device, comprising: an elongated body region, having a source region coupled to a first end, and a drain region coupled to a second end; a plurality of gates along a length of the elongated body region, each of the plurality of gates being separated from the elongated body region by at least a charge storage structure; and a source line directly coupled to the body region.
地址 Boise ID US
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