发明名称 Semiconductor device driving unit and method
摘要 A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.
申请公布号 US8749278(B2) 申请公布日期 2014.06.10
申请号 US201113198759 申请日期 2011.08.05
申请人 Honda Motor Co., Ltd. 发明人 Saotome Koji;Tsukada Yoshinari;Goto Masatoshi;Takeuchi Yusuke
分类号 H03K3/00 主分类号 H03K3/00
代理机构 代理人
主权项 1. A semiconductor device driving unit which supplies, to establish electrical continuity or disconnection in a bus, a drive signal to a gate of a first semiconductor device of a series connection of the first semiconductor device and a second semiconductor device each of which has such a switching function as to be turned on or off according to a voltage of a drive signal applied to the gate, a collector and an emitter of each of which are inserted in the bus, and each of which is connected to a free wheeling diode in parallel, the semiconductor device driving unit comprising: a feedback unit configured to generate a feedback voltage as part of the voltage of the drive signal according to a temporal variation of a current flowing through the bus, wherein the feedback unit comprises: a turn-off feedback unit configured to generate the feedback voltage according to a temporal variation of a collector current of the first semiconductor device in a case that the first semiconductor device is turned off from on; anda turn-on feedback unit configured to generate the feedback voltage according to a commutation current flowing through the free wheeling diode connected to the second semiconductor device in a case that the first semiconductor device is turned on from off, wherein the turn-on feedback unit includes a commutation current direction detecting unit configured to detect a direction of the commutation current, and wherein the turn-on feedback unit is configured to generate the feedback voltage in a case that the commutation current detecting unit detects that the direction of the commutation current corresponds to a reverse recovery interval, and to generate no feedback voltage in other cases.
地址 Tokyo JP