| 摘要 |
<p>An atomic layer deposition method includes positioning a plurality of semiconductor wafers (24) into an atomic layer deposition chamber (13, 14, 15). Deposition precursor is emitted from individual gas inlets (25) associated with individual of the wafers (24) received within the chamber effective to form a respective monolayer onto said individual wafers (24) received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets (25) associated with individual of the wafers (24) received within the chamber (13, 14, 15). An atomic layer deposition tool includes a subatmospheric load chamber (16), a subatmospheric transfer chamber (12) and a plurality of atomic layer deposition chambers (13, 14, 15). Other aspects and implementations are disclosed.</p> |
