| 摘要 |
The present invention relates to a plasma processing apparatus and an impedance matching method thereof. The plasma processing apparatus according to one embodiment of the present invention includes: an RF power source which supplies an RF signal; a plasma chamber which generates plasma by using the RF signal; an impedance matching unit which matches the input impedance of the plasma chamber; a first sensor which senses the RF signal outputted from the RF power source; a second sensor which senses the RF signal applied to the plasma chamber; and a controller which controls the impedance matching unit based on the sensing data of the first sensor and the second sensor. |
