Three-dimensional integrated circuit (3DIC)

摘要

An embodiment 3DIC device includes a semiconductor chip, a die, and a polymer. The semiconductor chip includes a semiconductor substrate, wherein the semiconductor substrate comprises a first edge, and a low-k dielectric layer over the semiconductor substrate. The die is disposed over and bonded to the semiconductor chip. The polymer is molded onto the semiconductor chip and the die. The polymer includes a portion level with the low-k dielectric layer, wherein the portion of the polymer comprises a second edge vertically aligned to the first edge of the semiconductor substrate and a third edge contacting the low-k dielectric layer, wherein the second and the third edges are opposite edges of the portion of the polymer.

主权项

1. A device comprising:
a semiconductor chip comprising:
a semiconductor substrate, wherein the semiconductor substrate comprises a first edge; anda low-k dielectric layer over the semiconductor substrate; a die over and bonded to the semiconductor chip; and a polymer molded onto the semiconductor chip and the die, wherein the polymer comprises a portion laterally adjacent to the low-k dielectric layer, and wherein the portion of the polymer comprises:
a second edge vertically aligned to the first edge of the semiconductor substrate;a third edge contacting the low-k dielectric layer, wherein the second and the third edges are opposite edges of the portion of the polymer; anda curved end surface interfacing with the semiconductor substrate.