发明名称 Semiconductor device, method for manufacturing same, and semiconductor apparatus
摘要 According to one embodiment, a semiconductor device includes a semiconductor device body and an insulating adhesive layer. The semiconductor device body is formed with a square plate shape and has an element portion provided on a first major surface. The insulating adhesive layer is provided to cover a second major surface of the semiconductor device body and one or two of four side faces of the semiconductor device body.
申请公布号 US8749031(B2) 申请公布日期 2014.06.10
申请号 US201113051534 申请日期 2011.03.18
申请人 Kabushiki Kaisha Toshiba 发明人 Matsushima Ryoji
分类号 H01L23/58;H01L21/56 主分类号 H01L23/58
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor device body formed with a square plate shape that has a first major surface, a second major surface opposite to the first major surface, and four side surfaces each contacting the first major surface and the second major surface, an element portion provided on the first major surface; and an insulating adhesive layer provided so as to cover the second major surface of the semiconductor device body and one or two of the four side surfaces of the semiconductor device body and extending onto the first major surface adjacent the one or two of the four side surfaces, the other side surfaces of the semiconductor device body being not covered with the insulating adhesive layer.
地址 Tokyo JP