发明名称 Electrostatic discharge protection apparatus
摘要 An electrostatic discharge (ESD) protection apparatus includes at least one first transistor and at least one second transistor. The first transistor includes a control terminal, a first terminal, a second terminal, and a bulk. The control terminal and the second terminal of the first transistor are coupled to each other. The first terminal of the first transistor is coupled to one of a pad and a power rail line. Likewise, the second transistor also includes a control terminal, a first terminal, and a second terminal. The first terminal of the second transistor is coupled to the bulk of the first transistor, the bulk of the second transistor is coupled to the second terminal of the first transistor, and the second terminal of the second transistor is coupled to the other of the pad and the power rail line.
申请公布号 US8749931(B2) 申请公布日期 2014.06.10
申请号 US201213456204 申请日期 2012.04.25
申请人 Faraday Technology Corp. 发明人 Tsai Fu-Yi;Tsai Chia-Ku;Peng Yan-Hua;Ker Ming-Dou
分类号 H02H9/00;H02H1/00;H02H1/04;H02H3/22;H02H9/06 主分类号 H02H9/00
代理机构 代理人
主权项 1. An electrostatic discharge protection apparatus comprising: at least one first transistor comprising a control terminal, a first terminal, a second terminal, and a bulk, the control terminal and the second terminal of the first transistor being coupled to each other, the first terminal of the first transistor and a pad being coupled to each other; and at least one second transistor comprising a control terminal, a first terminal, and a second terminal, the first terminal of the second transistor being coupled to the bulk of the first transistor, the control terminal of the second transistor being coupled to the first terminal of the second transistor, the bulk of the second transistor being directly coupled to the control terminal and the second terminal of the first transistor, and the second terminal of the second transistor being coupled to a power rail line.
地址 Science-Based Industrial Park, Hsin-Chu TW