| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device includes forming a bit line on a substrate comprising an active region; forming an interlayer insulating layer covering the bit line on the substrate; forming a first hole at a location of the active region through the interlayer insulating layer; forming a dummy contact layer by filling the first hole; forming a mold layer on the interlayer insulating layer and the dummy contact layer; forming a second hole at a location of the dummy contact layer through the mold layer; removing the dummy contact layer in the first hole through the second hole; forming an epitaxial layer on a portion of the active region, which is exposed at a lower surface of the first hole; and forming a lower electrode on internal surfaces of the first hole and the second hole. |
| 申请公布号 |
US8748254(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201213494328 |
申请日期 |
2012.06.12 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Lee Kwang-wook;Lee Sang-jun;Hwang In-seak;Jeon In-sang;Gwak Byoung-yong;An Ho-kyun |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a bit line on a substrate comprising an active region; forming an interlayer insulating layer covering the bit line on the substrate; forming a first hole at a location of the active region through the interlayer insulating layer; forming a dummy contact layer by filling the first hole; forming a mold layer on the interlayer insulating layer and the dummy contact layer; forming a second hole at a location of the dummy contact layer through the mold layer; removing the dummy contact layer in the first hole through the second hole; forming an epitaxial layer on a portion of the active region, which is exposed at a lower surface of the first hole; and forming a lower electrode on internal surfaces of the first hole and the second hole.
|
| 地址 |
KR |
