METHOD FOR PRODUCTION OF A LAYERED STRUCTURE WITH NANOCRYSTALS IN A DIELECTRIC LAYER

摘要

A method for production of a sandwich layered structure with nanocrystals in a dielectric layer for application in a memory device. The method comprises -providing on a substrate a first layer of a first dielectric, providing on top of the first layer a second layer made of a first semiconductor, providing on top of the second layer a further layer made of a second dielectric, and thermal treatment in a nonreactive or reducing gas atmosphere at a temperature suitable for production of nanocrystals made of the first semiconductor. The second layer is provided by deposition of the first semiconductor using molecular beam epitaxy or chemical vapour deposition under high vacuum conditions, preferably less than 1.3 µPa (10<-8> Torr).