Plasma source pumping and gas injection baffle

摘要

A plasma processing system. The processing system comprises a process chamber having first and second ends arranged such that the first end opposes the second end. A substrate support is positioned at the first end of the process chamber and is configured to support a substrate. An exhaust system is positioned proximate the second end of the process chamber and draws a vacuum on the process chamber. Between the exhaust system and substrate support there is a plurality of super-Debye openings, and between the exhaust system and the plurality of super-Debye openings is a plurality of sub-Debye openings. The super-Debye openings are configured to limit diffusion of plasma while the sub-Debye openings are configured to quench plasma.

主权项

1. A plasma processing system comprising:
a process chamber having first and second ends, the first end opposing the second end; a substrate support configured to support a substrate thereon, the substrate support being positioned at the first end of the process chamber; an exhaust system configured to draw a vacuum and operably coupled proximate the second end of the process chamber; a plurality of super-Debye openings positioned between the exhaust system and the substrate support and configured to limit diffusion of a plasma therethrough; and a plurality of sub-Debye openings positioned between the exhaust system and the plurality of super-Debye openings and configured to quench the diffusing plasma.