| 摘要 |
The present invention relates to a low-temperature plasma device for gasification and combustion reaction activation and, more particularly, to a low-temperature plasma device for gasification and combustion reaction activation with which a small amount of energy is injected to obtain a high synthesis gas yield. The low-temperature plasma device for gasification and combustion reaction activation according to the present invention includes a chamber where a gas injection port is formed on one side for gas to be injected and a gas discharge port is formed on the other side to discharge gas inside to a combustion chamber; and a dielectric barrier discharge device that is disposed in an inner space of the chamber, and changes the gas which is injected through the gas injection port of the chamber into gas containing a large amount of radicals and ions through a low-temperature discharge treatment. |
