SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To suppress leak current of a silicon carbide semiconductor device.SOLUTION: First to third impurity regions 11 to 13 of a silicon carbide substrate 10 include portions located on a flat surface FT of a first principal surface P1. A gate insulating film 21G mutually connects the first to third impurity regions 11 to 13 on the flat surface FT. A first main electrode 31 is in contact with the third impurity region 13 on the flat surface FT. A second main electrode 42 is provided on a second principal surface P2. A side wall insulating film 21S covers a side wall surface ST of the first principal surface P1. The side wall surface ST is inclined at an angle of not less than 50 degrees and not more than 80 degrees with respect to a {000-1} surface.