摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device, an integrated circuit device, an electronic apparatus and the like that can read data from a memory cell in a short time after power is turned on, and can suppress occurrence of read disturbance.SOLUTION: A nonvolatile storage device 10 to which a first voltage and a second voltage lower than the first voltage are supplied from an outside, includes: a memory cell MC that includes a first transistor FTr which stores data in a nonvolatile manner and in which the first voltage or the second voltage is supplied to a source, and a second transistor CTr to be used in selecting the first transistor; and a limiter circuit LC which, when reading the data from the memory cell, applies a gate voltage to a gate of the second transistor. The gate voltage of the second transistor to be supplied by the limiter circuit has a predetermined voltage difference based on a threshold voltage of the second transistor with respect to the source voltage of the first transistor. |