发明名称 NONVOLATILE STORAGE DEVICE, INTEGRATED CIRCUIT DEVICE, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile storage device, an integrated circuit device, an electronic apparatus and the like that can read data from a memory cell in a short time after power is turned on, and can suppress occurrence of read disturbance.SOLUTION: A nonvolatile storage device 10 to which a first voltage and a second voltage lower than the first voltage are supplied from an outside, includes: a memory cell MC that includes a first transistor FTr which stores data in a nonvolatile manner and in which the first voltage or the second voltage is supplied to a source, and a second transistor CTr to be used in selecting the first transistor; and a limiter circuit LC which, when reading the data from the memory cell, applies a gate voltage to a gate of the second transistor. The gate voltage of the second transistor to be supplied by the limiter circuit has a predetermined voltage difference based on a threshold voltage of the second transistor with respect to the source voltage of the first transistor.
申请公布号 JP2014106989(A) 申请公布日期 2014.06.09
申请号 JP20120259445 申请日期 2012.11.28
申请人 SEIKO EPSON CORP 发明人 TOKUDA YASUNOBU
分类号 G11C16/06;G11C16/04;G11C17/12 主分类号 G11C16/06
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