GRAPHENE MAGNETIC TUNNEL JUNCTION SPIN FILTERS AND METHODS OF MAKING

摘要

A Tunnel Magnetic Junction of high magnetoresistance is prepared at temperatures and pressure consistent with Si CMOS fabrication and operation. A first metal layer of cobalt or nickel is grown on an interconnect or conductive array line of e.g., copper. The metal layer is formed by electron beam irradiation. Annealing at UHV at temperatures below 700K yields a carbon segregation that forms a few layer thick (average density 3.5 ML) graphene film on the metal layer. Formation of a second layer of metal on top of the graphene barrier layer yields a high performance MTJ.

主权项

1. A method for forming a few molecular layer thick film of graphene on a metal layer, comprising depositing said metal layer on a substrate by electron beam deposition, and annealing the metal layer so deposited at temperatures below 700 K for a period of time sufficient to induce segregation of carbon in said metal layer to a surface of that metal layer, whereby a few molecule layer thick film of graphene is formed on said metal layer.