| 摘要 |
A FinFET and a manufacturing method thereof. The method for manufacturing the FinFET comprises: patterning a semiconductor substrate (101) to form a ridge-shaped object; injecting ions, so as to form a doping punch-through-stopper layer (103) in the ridge-shaped object, and forming a semiconductor fin (104) on the part above the doping punch-through-stopper layer (103), of the semiconductor substrate (101); forming a gate stack intersecting the semiconductor fin (104), the gate stack comprising a gate dielectric (105) and a gate conductor (106), the gate dielectric (105) separating the gate conductor (106) from the semiconductor fin (104); forming a gate sidewall (107) surrounding the gate conductor (106); and forming a source region and a drain region at parts on two sides of the gate stack, of the semiconductor fin (104). The doping punch-through-stopper layer (103) separates the semiconductor fin (104) and the semiconductor substrate (101), thereby cutting a leakage current path passing through the semiconductor substrate (101) between the source region and the drain region. |
