| 摘要 |
<p>The present disclosure relates to a group III nitride semiconductor laminate comprising: an m-plane substrate; a growth prevention region which is formed on the m-plane substrate and which has a plurality of windows for the growth of group III nitride semiconductor; a seed layer formed on the m-plane substrate at least in the region of the plurality of windows; and a group III nitride semiconductor layer which is grown from the seed layer and deployed in an a-axis direction and c-axis direction and coalesced, wherein the group III nitride semiconductor layer cooperates with the group III nitride semiconductor that is deployed in the c-axis direction in a single window so as to be deployed over the growth prevention region and deployed in a-axis direction in the neighboring window, so as to form a cavity.</p> |
