| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED OPERATING SPEED AND DATA STORAGE DEVICE INCLUDING THE SAME |
| 摘要 |
A semiconductor memory device includes a power block configured to generate an internal voltage based on an external voltage which is applied through a power pad; a circuit block configured to operate according to the internal voltage and drive memory cells; and a CAM (content addressed memory) block configured to operate according to the external voltage and store setting information necessary for driving of the memory cells. |
| 申请公布号 |
US2014156924(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201313845543 |
申请日期 |
2013.03.18 |
| 申请人 |
SK HYNIX INC. |
发明人 |
JEON Chun Woo;HUH Hwang |
| 分类号 |
G11C15/04 |
主分类号 |
G11C15/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a power block configured to generate an internal voltage based on an external voltage; a circuit block configured to operate according to the internal voltage and drive memory cells; and a CAM (content addressed memory) block configured to operate according to the external voltage and store setting information necessary for driving of the memory cells.
|
| 地址 |
Icheon-si KR |
