| 发明名称 |
INCREASING THE DOPING EFFICIENCY DURING PROTON IRRADIATION |
| 摘要 |
A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the semiconductor body with protons and irradiating the semiconductor body with electrons. After the process of irradiating with protons and after the process of irradiating with electrons, the semiconductor body is subjected to heat treatment in order to attach the protons to vacancies by means of diffusion. |
| 申请公布号 |
US2014151858(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201314057671 |
申请日期 |
2013.10.18 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schulze Hans-Joachim;Laven Johannes;Niedernostheide Franz Josef;Pfirsch Frank Dieter |
| 分类号 |
H01L21/265;H01L29/167 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for doping a semiconductor body, the method comprising:
irradiating the semiconductor body with protons; irradiating the semiconductor body with electrons; heat treating the semiconductor body after irradiating with protons and after irradiating with electrons in order to attach the protons to vacancies by means of diffusion.
|
| 地址 |
Neubiberg DE |
