| 发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
The compound semiconductor device includes a first-compound-semiconductor-layer, a second-compound-semiconductor-layer formed on an upper side of the first-compound-semiconductor-layer and having a band gap larger than the band gap of the first-compound-semiconductor-layer, a p-type third-compound-semiconductor-layer formed on an upper side of the second-compound-semiconductor-layer, an electrode formed on an upper side of the second-compound-semiconductor-layer through the third-compound-semiconductor-layer, a fourth-compound-semiconductor-layer formed so as to be in contact with the third-compound-semiconductor-layer at an upper side of the second-compound-semiconductor-layer and having a band gap smaller than the band gap of the second-compound-semiconductor-layer, and a fifth-compound-semiconductor-layer formed so as to be in contact with the third-compound-semiconductor-layer at an upper side of the fourth-compound-semiconductor-layer and having a band gap larger than the band gap of the fourth-compound-semiconductor-layer. |
| 申请公布号 |
US2014151748(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201314066025 |
申请日期 |
2013.10.29 |
| 申请人 |
Fujitsu Limited |
发明人 |
Nishimori Masato;Imada Tadahiro;Ohki Toshihiro |
| 分类号 |
H01L29/778;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A compound semiconductor device comprising:
a first compound semiconductor layer; a second compound semiconductor layer formed on an upper side of the first compound semiconductor layer and having a band gap larger than the band gap of the first compound semiconductor layer; a p-type third compound semiconductor layer formed on an upper side of the second compound semiconductor layer; an electrode formed on an upper side of the second compound semiconductor layer through the third compound semiconductor layer; a fourth compound semiconductor layer formed so as to be in contact with the third compound semiconductor layer at an upper side of the second compound semiconductor layer and having a band gap smaller than the band gap of the second compound semiconductor layer; and a fifth compound semiconductor layer formed so as to be in contact with the third compound semiconductor layer at an upper side of the fourth compound semiconductor layer and having a band gap larger than the band gap of the fourth compound semiconductor layer.
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| 地址 |
Kawasaki-shi JP |
