ETCHANT FOR SEMICONDUCTOR SUBSTRATE, ETCHING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an etchant capable of selectively and efficiently removing a first layer containing TiN with respect to a second layer containing a specific metal and achieving surface uniformity of a TiN layer after etching, an etching method for using the same, and a method for manufacturing a semiconductor element.SOLUTION: An etchant for selectively removing a first layer by processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing transition metal includes a fluorine-containing compound, an oxidizing agent, and an organosilicon compound.