| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly-reliable thin-film transistor with a small amount of leakage current.SOLUTION: A method for manufacturing a thin-film transistor comprises the steps of: forming a back channel portion in the thin-film transistor by etching using a resist mask; removing the resist mask; and removing an etching residue or the like on the back channel portion by etching a part of the back channel portion. Thereby leakage current caused by the residue or the like can be reduced. Using dry etching using no bias is preferable when further etching the back channel portion.</p> |
