发明名称 |
FILM STRUCTURE AND METHOD FOR PRODUCING SAME |
摘要 |
A film structure (carbon material-insulating film structure) of the present invention includes a carbon material and an insulating film disposed on the carbon material and composed of fluorine-added magnesium oxide. The amount of added fluorine in the magnesium oxide is 0.0049 atomic percent or more and 0.1508 atomic percent or less. This film structure facilitates the realization of an electronic device, such as a spin device, which uses a carbon material such as graphene. This film structure is formed, for example, by sputtering using a target containing magnesium oxide and magnesium fluoride. |
申请公布号 |
US2014154510(A1) |
申请公布日期 |
2014.06.05 |
申请号 |
US201214131197 |
申请日期 |
2012.07.04 |
申请人 |
Odagawa Akihiro;Matsushita Akio;Matsukawa Nozomu |
发明人 |
Odagawa Akihiro;Matsushita Akio;Matsukawa Nozomu |
分类号 |
H01L29/16;C23C14/08;C23C14/06;C23C14/35 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
1. A film structure comprising:
a carbon material; and an insulating film disposed on the carbon material and composed of fluorine-added magnesium oxide, wherein the amount of added fluorine in the magnesium oxide is 0.0049 atomic percent or more and 0.1508 atomic percent or less.
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地址 |
Osaka JP |