FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTURING THEREOF

摘要

A FinFET device and a method for manufacturing a FinFET device is provided. An example device may comprise a substrate including at least two fin structures. Each of the at least two fin structures may be in contact with a source and drain region and each of the at least two fin structures may include a strain relaxed buffer (SRB) overlying and in contact with the substrate and an upper layer overlying and in contact with the SRB. The composition of the upper layer and the SRB may be selected such that the upper layer of a first fin structure is subjected to a first mobility enhancing strain in the as-grown state, the first mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region and where at least an upper part of the upper layer of a second fin structure is strain-relaxed.

主权项

1. Method for manufacturing a dual channel FinFET device having at least one channel subjected to a mobility enhancement strain, the method comprising:
providing a substrate comprising at least two fin structures separated by an isolation region, each of the fin structures in physical contact with a source region and a drain region,
wherein each of the at least two fin structures comprises an upper layer suitable to form a n-type or p-type channel and a strained relaxed buffer (SRB) underlying and in contact with said upper layer, and overlying and in contact with the substrate,wherein a composition of the upper layer and the SRB is selected such that the upper layer of a first fin structure is subjected to a first mobility enhancing strain in an as-grown state, the first mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region, performing an ion implantation in at least a part of the upper layer of a second fin structure, thereby forming an amorphous layer, then performing a re-crystallization by laser anneal of the amorphous layer, thereby forming a strain-relaxed upper layer of the second fin structure.