| 发明名称 |
ION DETECTOR |
| 摘要 |
An ion detector (1) comprising a semi-conductor avalanche photodiode (4) and a scintillation layer (2), the scintillation layer having a thickness in the range 0.1 mm to 00 mm, the scintillation layer arranged to generate photons towards the photodiode resulting from ions impinging on the scintillation layer. |
| 申请公布号 |
US2014151564(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201214232086 |
申请日期 |
2012.06.29 |
| 申请人 |
Brouard Mark;Vallance Claire;Nomerotski Andrei;Turchetta Renato |
发明人 |
Brouard Mark;Vallance Claire;Nomerotski Andrei;Turchetta Renato |
| 分类号 |
G01T1/20 |
主分类号 |
G01T1/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An ion detector comprising a semi-conductor avalanche photodiode and a scintillation layer, the scintillation layer having a thickness in the range 0.1 μm to 100 μm, the scintillation layer arranged to generate photons towards the photodiode resulting from ions impinging on the scintillation layer.
|
| 地址 |
Oxford Oxfordshire GB |
