PACKAGING SYSTEM AND PROCESS FOR INERTIAL SENSOR MODULES USING MOVING-GATE TRANSDUCERS

摘要

A sensor device includes a first CMOS chip and a second CMOS chip with a first moving-gate transducer formed in the first CMOS chip for implementing a first 3-axis inertial sensor and a second moving-gate transducer formed in the second CMOS chip for implementing a second 3-axis inertial sensor. An ASIC for evaluating the outputs of the first 3-axis inertial sensor and the second 3-axis inertial sensor is distributed between the first CMOS chip and the second CMOS chip.

主权项

1. A sensor device comprising:
a first complementary metal-oxide semiconductor (CMOS) chip having a first mounting side and including first bonding structures and first chip-to-chip electrical contacts on the first mounting side; a second CMOS chip having a second mounting side arranged facing the first mounting side and including second bonding structures and second chip-to-chip electrical contacts on the second facing side, the second bonding structures being bonded to the first bonding structures and the second chip-to-chip contacts being electrically connected to the first chip-to-chip contacts; a first moving-gate transducer formed in the first CMOS chip, the first moving-gate transducer implementing a first 3-axis inertial sensor; a second moving-gate transducer formed in the second CMOS chip, the second moving-gate transducer implementing a second 3-axis inertial sensor; a sensor application-specific integrated circuit (ASIC) operably coupled to receive and evaluate outputs of the first 3-axis inertial sensor and the second 3-axis inertial sensor, the sensor ASIC including a first ASIC portion formed in the first CMOS chip and a second ASIC portion formed in the second CMOS chip, the first and the second ASIC portions being coupled via the first and the second chip-to-chip contacts.