| 摘要 |
A semiconductor device includes at least two device cells integrated in a semiconductor body. Each device cell includes a drift region, a source region, a drain region arranged between the source region and the drift region, a diode region, a pn junction between the diode region and the drift region, and a trench with a first sidewall, a second sidewall opposite the first sidewall, and a bottom. The body region is adjoined to the first sidewall, the diode region is adjoined to the second sidewall, and the pn junction is adjoined to the bottom of the trench. Each device cell further includes a gate electrode arranged in the trench and dielectrically insulated from the body region, the diode region and the drift region by a gate dielectric. The diode regions of the at least two device cells are distant in a lateral direction of the semiconductor body. |
