| 发明名称 |
METHOD AND APPARATUS CAPABLE OF SYNTHESIZING HIGH-DENSITY WIRES IN PORES AND ON SURFACE OF POROUS MATERIAL |
| 摘要 |
According to an embodiment of the present invention, provided is a method of synthesizing nanowires that includes the following steps of: disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from a substrate which is provided for synthesis of nanowires; heating the reaction furnace; and synthesizing nanowires by allowing a source gas to be deposited on the substrate while flowing through the gap between the substrate and the covering. |
| 申请公布号 |
US2014154417(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201314077482 |
申请日期 |
2013.11.12 |
| 申请人 |
Industry-Academic Cooperation Foundation, Yonsei University |
发明人 |
Choi Doo Jin;Choi YooYoul |
| 分类号 |
C23C16/44 |
主分类号 |
C23C16/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of synthesizing nanowires comprising following steps of:
disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from a substrate which is provided for synthesis of nanowires; heating the reaction furnace, and synthesizing nanowires by allowing a source gas to be deposited on the substrate while flowing through the gap between the substrate and the covering.
|
| 地址 |
Seoul KR |
