发明名称 Field-effect transistor used for switching circuit and/or micro fluid system as sensor for detecting fluid, has rolled multilayer structure comprising thin-layers comprising semiconductor material and electrical leading gate material
摘要 A field-effect transistor has rolled multilayer structure comprising 2 or more thin-layers comprising semiconductor material and electrical leading gate material which are separated by 1 or more barrier layers. An independent claim is included for usage of field-effect transistor.
申请公布号 DE102012221932(A1) 申请公布日期 2014.06.05
申请号 DE201210221932 申请日期 2012.11.30
申请人 LEIBNIZ-INSTITUT FÜR FESTKÖRPER- UND WERKSTOFFFORSCHUNG E.V. 发明人 GRIMM, DANIEL;SCHMIDT, OLIVER G.;BOF BUFON, CARLOS CESAR
分类号 H01L29/78;B81B1/00;H01L29/778 主分类号 H01L29/78
代理机构 代理人
主权项
地址