| 摘要 |
<p>A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate, the active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers, and of the barrier layers, a final barrier layer disposed at a side closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer at a side close to the n-side semiconductor layer.</p> |
