发明名称 POST-WRITE READ IN NON-VOLATILE MEMORIES USING COMPARISON OF DATA AS WRITTEN IN BINARY AND MULTI-STATE FORMATS
摘要 <p>Techniques for a post-write read are presented. In an exemplary embodiment, host data is initially written into the non-volatile memory in binary form, such as a non-volatile binary cache. It is then subsequently written from the binary section into a multi-state non-volatile section of the memory. After being written in multi-state format, pages of data from a multi-state block can then be checked against there source pages in the binary section to verify the quality of the multi-state write. This process can be performed on the memory device itself, without transferring the pages out to the controller.</p>
申请公布号 EP2737488(A2) 申请公布日期 2014.06.04
申请号 EP20120743322 申请日期 2012.07.25
申请人 SANDISK TECHNOLOGIES INC. 发明人 SHARON, ERAN;ALROD, IDAN
分类号 G11C16/34;G06F11/10;G11C11/56 主分类号 G11C16/34
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